Gate-controlled electron spin resonance in GaAsÕAlxGa1ÀxAs heterostructures
نویسندگان
چکیده
The electron spin resonance ~ESR! of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g factors.
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